BC856S/U_BC857S
PNP Silicon AF Transistor Arrays
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated transistor
with good matching in one package
• BC856S / U, BC857S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC856S/U
BC857S
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
Marking
Pin Configuration
BC856S
3Ds
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BC856U
3Ds
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
BC857S
3Cs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1
Package
2011-07-25
BC856S/U_BC857S
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
-
BC856S/U
65
BC857S
45
Collector-base voltage
V
VCBO
BC856S, BC856U
80
BC857S
50
5
Emitter-base voltage
VEBO
Collector current
IC
100
Peak collector current, tp ≤ 10 ms
ICM
200
Total power dissipation-
Ptot
250
TS ≤ 118 °C, BC856U, BC857U
250
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
mA
-
TS ≤ 115 °C, BC856S
Junction temperature
Unit
150
°C
-65 ... 150
Value
BC856S, BC857S
≤ 140
BC856U
≤ 130
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-07-25
BC856S/U_BC857S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0 , BC856S/U
65
-
-
IC = 10 mA, IB = 0 , BC857S
45
-
-
IC = 10 µA, IE = 0 , BC856S/U
80
-
-
IC = 10 µA, IE = 0 , BC857S
50
-
-
5
-
-
Collector-base breakdown voltage
Unit
-
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
V
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 45 V, IE = 0
-
-
0.015
VCB = 45 V, IE = 0 , TA = 150 °C
-
-
5
DC current gain1)
-
hFE
IC = 10 µA, VCE = 5 V
-
250
-
IC = 2 mA, VCE = 5 V
200
290
630
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
75
300
IC = 100 mA, IB = 5 mA
-
250
650
Base emitter saturation voltage1)
-
VBEsat
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
850
-
Base-emitter voltage1)
mV
VBE(ON)
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
1Pulse
test: t < 300µs; D < 2%
3
2011-07-25
BC856S/U_BC857S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
1.5
-
pF
Ceb
-
8
-
h11e
-
4.5
-
kΩ
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
µS
F
-
-
10
dB
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figure
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ
4
2011-07-25
BC856S/U_BC857S
DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5 V
IC = ƒ(VCEsat ), hFE = 20
EHP00382
10 3
h FE 5
EHP00380
10 2
mA
ΙC
100 C
100 C
25 C
-50 C
25 C
-50 C
10 2
10 1
5
5
10 1
10
5
5
10 0
10 -2
5
10 -1
5 10
0
5 10
1
mA 10
ΙC
0
10 -1
2
0
0.1
0.2
0.3
0.4
V 0.5
VCEsat
Base-emitter saturation voltage
Collector cutoff current ICBO = ƒ(TA)
IC = ƒ(VBEsat), hFE = 20
VCBO = 30 V
EHP00379
10 2
mA
ΙC
EHP00381
10 4
nA
Ι CB0
10
10 3
100 C
25 C
-50C
1
5
max
10 2
5
5
typ
10 1
5
10 0
5
10
0
5
10 -1
10 -1
0
0.2
0.4
0.6
0.8
V
1.2
V BEsat
0
50
100
C
150
TA
5
2011-07-25
BC856S/U_BC857S
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00378
10 3
12
pF
MHz
5
10
CCB(CEB )
fT
10
9
8
7
2
6
5
5
4
CEB
3
2
CCB
1
10 1
10 -1
5 10 0
5
10 1
mA
ΙC
0
0
10 2
4
8
12
16
V
Total power dissipation P tot = ƒ(TS)
Total power dissipation P tot = ƒ(TS)
BC856S, BC857S
BC856U
300
300
mW
mW
250
250
225
225
200
200
Ptot
Ptot
22
VCB(VEB
175
175
150
150
125
125
100
100
75
75
50
50
25
25
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
TS
15
30
45
60
75
90 105 120 °C
150
TS
6
2011-07-25
BC856S/U_BC857S
Permissible Pulse Load RthJS = ƒ(tp)
Permissible Pulse Load
BC856S; BC857S
Ptotmax/PtotDC = ƒ(tp )
BC856S, BC857S
10
3
10 3
Ptotmax/PtotDC
K/W
RthJS
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
10 1
-2
s
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
10
0
tp
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BC856U
Ptotmax/PtotDC = ƒ(tp )
BC856U
10
3
10 3
2
RthJS
10
Ptotmax / PtotDC
K/W
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
tp
7
2011-07-25
Package SC74
BC856S/U_BC857S
Package Outline
B
1.1 MAX.
1
2
3
0.35 +0.1
-0.05
Pin 1
marking
0.2
B 6x
M
A
0.1 MAX.
0.95
0.2
1.9
1.6 ±0.1
4
10˚ MAX.
5
2.5 ±0.1
6
0.25 ±0.1
0.15 +0.1
-0.06
(0.35)
10˚ MAX.
2.9 ±0.2
(2.25)
M
A
Foot Print
2.9
1.9
0.5
0.95
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCW66H
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.7
8
4
Pin 1
marking
3.15
1.15
8
2011-07-25
Package SOT363
BC856S/U_BC857S
Package Outline
2 ±0.2
0.9 ±0.1
+0.1
6x
0.2 -0.05
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
1.6
0.9 0.7
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.3
8
4
Pin 1
marking
1.1
2.15
9
2011-07-25
BC856S/U_BC857S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
10
2011-07-25